| 1. | Half - wave voltage
半波电压 |
| 2. | Bulk high - speed traveling wave e - o modulator was also fabricated , the half - wave voltage is just 760 v , response time of the device is low up to 297 ps
此外，用本实验的ktp晶体制作了体式高速行波电光调制器，半波电压760v ，脉冲响应时间快到297ps 。 |
| 3. | Finite element method ( fem ) is a method that is efficient in electromagnetics . for the first time the thesis applied vectorial fem to single mode performance and half - wave voltage analysis and design
有限元法被广泛应用于电磁场的研究中。本论文首次采用了矢量有限元方法来研究质子交换铌酸锂光波导的单模特性和半波电压。 |
| 4. | In order to realize low half - wave voltage , high polarzation extinction ratio , low pigtailing polarization crosstalk , low insert loss , precise tapped power ( ratio ) and good splitting beam ratio , the optimum design was performed
为了实现低的半波电压、高的偏振消光比、低尾纤串音、低插入损耗、精确的抽头功率比和良好的分束比,我们对器件结构进行了优化设计。 |
| 5. | Because of the limitation of the measuring condition , in the thesis we had only measured some characteristics of the phase modulator : channel waveguides " loss coefficient is 0 . 22db / cm , the split - ratio is 52 / 48 and half - wave voltage is < 5v
由于条件所限，论文中仅测量了直波导损耗系数、相位调制器的半波电压和输出分束比。经测量，半波电压小于5v ，直波导损耗系数为0 . 22db cm ，输出分支比为52 48 。 |
| 6. | This thesis performs the research how to analyze and design lithium niobate optical modulator in i - fog . the analysis concentrates on those performance parameters of a modulator : half - wave voltage , single mode performance , quasi te / tm polarization , loss , bandwidth and split - ratio
这些都是围绕调制器的性能参数来研究的，它们包括：半波电压，单模特性，偏振特性( te和tm模之间的输出功率比值) ，损耗，带宽及分支比等。 |
| 7. | The relationships between extinction - ration , half - wave voltage and electrode structure have been analyzed with transfer matrix theory and effective index method . the following conclusions have been made : 1 ) . the electrode width can be optimized to get the lowest half - wave voltage of boa - type optical switch
我们设计的集总电极型boa光开关理论3db调制带宽大于2 . 5ghz ，半波电压为5v ，消光比大于40db ，对tm模的理论衰减大于45db ，而对te模的损耗小于0 . 15db 。 |
| 8. | On the basis of the analysis and compare , we designed the least length of s - bend y - branch to decrease the transmission loss when the space between the outport is 250jjm . we also analyzed thoroughly dependence of half - wave voltage and bandwidth on the width , the length of modulator ' s electrodes and the gap between two electrodes
对于调制器的电极本文也进行较为深入的研究，探讨了电极宽度、电极长度、电极间距对半波电压的影响，并据此对单y相位调制器的电极结构进行了优化设计。 |
| 9. | The results of property test of dkdp crystal grown on a point seed show that laser damage threshold is about 5gw / cm2 , ? half - wave voltage is about 4kv , extinction ratio is about 1600 : l . the obvious difference of dkdp crystals is not found between traditional technique and point seed growth technique
性能测试结果表明，点状籽晶全方位生长的dkdp晶体的激光损伤阈值约为5gw cm ~ 2 、半波电压约为4kv 、动态消光比约为1600 ： 1 ，发现与传统方法生长晶体的性能没有明显的差别。 |
| 10. | According to our theoretic analysis and the realistic fabricating condition , the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2 . 5 ghz , half - wave voltage about 5v , extinction - ration less than - 40db , transmission loss of tm mode greater than 45db and transmission of te mode less than 0 . 15db . to obtain higher switching speed , we proposed that traveling - wave electrode is applied to boa device
我们选择在sigaas衬底上生长重掺杂层，通过控制其厚度来设计速度匹配的boa光开关行波电极，实现boa光开关的高速和高带宽，本文结合boa型光开关的特点提出一种行波电极型boa光开关结构，其理论3db调制带宽大于20ghz 。 |
